ECP0978 100V N-Channel MOSFETs

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.

 

Features

◆100V,70A, RDS(ON) =7.8mΩ@VGS = 10V

◆Improved dv/dt capability

◆Fast switching

◆100% EAS Guaranteed

◆Green Device Available

Application

◆Notebook

◆Load Switch

◆LED applications

◆Quick Charger