BSS138 N-Channel Enhancement Mode Field Effect

Product Summary

◆VDS       50V

◆ID 340mA

◆RDS(ON)( at VGS=10V)   <2.5ohm

◆RDS(ON)( at VGS=4.5V)  <3.0ohm

 General Description

◆Trench Power MV MOSFET technology

◆Voltage controlled small signal switch

◆Low input Capacitance

◆Fast Switching Speed

◆Low Input / Output Leakage

 Applications

◆Battery operated systems

◆Solid-state relays

◆Direct logic-level interface:TTL/CMOS