EC2N7002S N-Channel Enhancement Mode MOSFET

Description

The EC2N7002S is the N-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.

 Features

◆60V/0.5A, RDS(ON) = 1.6 Ω @ VGS = 10V

◆Improved dv/dt capability

◆Fast switching

◆100% EAS Guaranteed

◆G-S ESD Protection Diode Embedded

◆Green Device Available

◆SOT-23-3S package design

 Applications

◆POWER Management in Note

◆Portable Equipment

◆DC/DC Converter

◆Load Switch

◆LED Lighting

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