The EC2N7002S is the N-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.
◆60V/0.5A, RDS(ON) = 1.6 Ω @ VGS = 10V
◆Improved dv/dt capability
◆100% EAS Guaranteed
◆G-S ESD Protection Diode Embedded
◆Green Device Available
◆SOT-23-3S package design
◆POWER Management in Note