EC732129H3 – 20V,-6A,P-Channel MOS

General description

It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance withhigh repetitive avalanche rating. These features combine to make this design an extremely efficient and reliabledevice for use in power switching application and a wide variety of other applications.


◆ Advanced MOSFET process technology

◆ Special designedfor PWM, load switching and general purpose applications

◆ Ultra low on-resistance with low gate charge

◆ Fast switching and reverse body recovery

◆ 150℃ operating temperature


Pin Configurations

Ordering info

Typical Applications circuit