EC733339- -30V,-4.1A P-channel MOSFET

General description

It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.


n  Advanced MOSFET process technology

n  Special designed for PWM, load switching and

general purpose applications

n  Ultra low on-resistance with low gate charge

n  Fast switching and reverse body recovery

n  150℃ operating temperature



Pin Configurations

Ordering info