It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.
n Advanced MOSFET process technology
n Special designed for PWM, load switching and
general purpose applications
n Ultra low on-resistance with low gate charge
n Fast switching and reverse body recovery
n 150℃ operating temperature