EC738205-20V、4A Dual N-Channel MOSFET

General description

It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in buttery protection, power switching application and a wide variety of other applications.

Features

n Advanced trench MOSFET process technology

n Special designed for buttery protection , load switching and general power management

n Ultra low on-resistance with low gate charge

n Fast switching and reverse body recovery

n 150℃ operating temperature

Applications

Pin Configurations

Ordering info

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