EC742314-20V N-Channel MOSFETs

General description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.

 

Features

 

20V,5.6A,RDS(ON)=26MΩ@VGS=4.5V

Improved dt/dv capability

Fast switching

Green Device Avaliable                         

Suit for 1.8V Gate Driver applications

Applications

 

Notebook

Load switch

Hand-held Instruments

Pin Configurations

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