EC743612-30V N-Channel MOSFETs

General description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.

Features

■30V,6.5A,RDS(ON)=32MΩ@VGS=10V

■ Improved dt/dv capability

■ Fast switching

■ Green Device Avaliable

■ Suit for 1.8V Gate Driver applications

 

Applications

 

 

■ Notebook

■ Load switch

■ Hand-held Instruments

 

Pin Configurations

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