These dual N Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
◆20V/0.8A, RDS(ON) = 300mΩ@ VGS = 4.5V
◆Suit for 1.5V Gate Drive Applications
◆G-S ESD protection diode embedded
◆SOT-363 package design
◆Hand –held Instruments