ECDEV2220Z 20 V Dual N-Channel MOSFETs

Description

These dual N Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency fast switching applications.

 Features

◆20V/0.8A, RDS(ON) = 300mΩ@ VGS = 4.5V

◆Suit for 1.5V Gate Drive Applications

◆Fast switching

◆G-S ESD protection diode embedded

◆SOT-363 package design

 Applications

◆Networking

◆Notebook

◆Load Switch

◆Hand –held Instruments

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