ECDN0910S 100V N-Channel MOSFETs

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode

These devices are well suited for high efficiency fast switching applications.

 Features

◆100V / 2A, RDS(ON) = 200mΩ @ VGS =10V

◆Improved dv/dt capability

◆Fast switching

◆Green Device Available

◆100% EAS Guaranteed

◆SOT-23 package design

 Applications

◆Networking

◆Load Switch

◆LED Applications

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