These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode
These devices are well suited for high efficiency fast switching applications.
◆100V / 2A, RDS(ON) = 200mΩ @ VGS =10V
◆Improved dv/dt capability
◆Green Device Available
◆100% EAS Guaranteed
◆SOT-23 package design