ECDN2311S 20V P- Channel MOSFETs

Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode

These devices are well suited for high efficiency fast switching applications.

 Features

◆-20V/-4.7A, RDS(ON) = 50mΩ @ VGS = -4.5V

◆Improved dv/dt capability

◆Suit for -1.8V Gate Drive Applications

◆Fast switching

◆SOT-23 package design

 Applications

◆Notebook

◆Battery Protection

◆Load Switch

◆Hand-held Instruments

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