These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode
These devices are well suited for high efficiency fast switching applications.
◆-20V/-4.1A, RDS(ON) = 65mΩ @ VGS = -4.5V
◆Improved dv/dt capability
◆Suit for -1.8V Gate Drive Applications
◆SOT-23 package design