ECDN2313S 20V P- Channel MOSFETs


These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode

These devices are well suited for high efficiency fast switching applications.


◆-20V/-4.1A, RDS(ON) = 65mΩ @ VGS = -4.5V

◆Improved dv/dt capability

◆Suit for -1.8V Gate Drive Applications

◆Fast switching

◆SOT-23 package design



◆Battery Protection

◆Load Switch

◆Hand-held Instruments