ECDS3905 30V P- Channel MOSFETs

Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency fast switching applications..

 Features

◆-30V/-10A, RDS(ON) =18mΩ @ VGS = -10V

◆Fast switching

◆Suit for -4.5V Gate Drive Applications

◆SOP-8  package design

 Applications

◆MB / VGA / Vcore

◆POL Applications

◆LED Application

◆Load Switch

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