These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications..
◆-30V/-10A, RDS(ON) =18mΩ @ VGS = -10V
◆Suit for -4.5V Gate Drive Applications
◆SOP-8 package design
◆MB / VGA / Vcore