ECDS3905 30V P- Channel MOSFETs


These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency fast switching applications..


◆-30V/-10A, RDS(ON) =18mΩ @ VGS = -10V

◆Fast switching

◆Suit for -4.5V Gate Drive Applications

◆SOP-8  package design


◆MB / VGA / Vcore

◆POL Applications

◆LED Application

◆Load Switch