ECP2220Z 20V Dual N Channel MOSFETs

Description

These dual N Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.

 

Features

◆Fast switching

◆Green Device Available

◆Suit for 1.5V Gate Drive Applications

 

Application

◆Notebook

◆Load Switch

◆Networking

◆Hand-held Instruments