ECP3807-30V P-Channel MOSFETs

General Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.


◆-30V,-7A, RDS(ON) =23mΩ@VGS = -10V

◆Fast switching

◆Green Device Available

◆Suit for -4.5V Gate Drive Applications


◆MB / VGA / Vcore

◆POL Applications

◆Load Switch

◆LED Application