ECP3812V-30V N-Channel MOSFETs

General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.


◆30V,20A, RDS(ON) =20mΩ @VGS = 10V

◆Improved dv/dt capability

◆Fast switching

◆100% EAS Guaranteed

◆Green Device Available



◆MB / VGA / Vcore

◆POL Applications

◆SMPS 2nd SR