ECP3906Z-30V N-Channel MOSFETs

General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.

Features

◆30V,60A, RDS(ON) =6mΩ@VGS = 10V

◆Improved dv/dt capability

◆Fast switching

◆100% EAS Guaranteed

◆Green Device Available

 Application

◆MB / VGA / Vcore

◆POL Applications

◆SMPS 2nd SR

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