ECP6982X 65V N-Channel MOSFETs

General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.

BVDSS RDSON ID
65V 5.6mW 83A

Features

◆65V,83A, RDS(ON) =5.6mΩ @VGS = 10V

◆Improved dv/dt capability

◆Fast switching

◆100% EAS Guaranteed

◆Green Device Available

 Application

◆Networking

◆Load Switch

◆LED applications

◆Quick Charger