These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
◆65V,83A, RDS(ON) =5.6mΩ @VGS = 10V
◆Improved dv/dt capability
◆100% EAS Guaranteed
◆Green Device Available