ECY2301F P-Channel Enhancement Mode Field Effect Transistor

Product Summary

◆VDS        -20V

◆ID   -2A

◆RDS(ON)( at VGS=-4.5V)      <120 mohm

◆RDS(ON)( at VGS=-2.5V)      <150 mohm

◆RDS(ON)( at VGS=-1.8V)      <195 mohm

 General Description

◆Trench Power LV MOSFET technology

◆Low RDS(ON)

◆Low Gate Charge

 Application

◆Video monitor

◆Power management