ECY2305B P-Channel Enhancement Mode Field Effect Transistor

Product Summary

◆VDS        -20V

◆ID   -5.4A

◆RDS(ON)( at VGS=-4.5V)      <42 mohm

◆RDS(ON)( at VGS=-2.5V)      <55 mohm

◆RDS(ON)( at VGS=-1.8V)      <75 mohm

 General Description

◆Trench Power LV MOSFET technology

◆High Density Cell Design for Low RDS(ON)

◆High Speed switching

 Application

◆Battery protection

◆Load switch

◆Power management