ECY3407A P-Channel Enhancement Mode Field Effect

Product Summary

◆VDS        -30V

◆ID   -4.1A

◆RDS(ON)( at VGS=-10V)       <55 mohm

◆RDS(ON)( at VGS=-4.5V)<68 mohm

 General Description

◆Trench Power LV MOSFET technology

◆High density cell design for Low RDS(ON)

◆High Speed switching

 Applications

◆Battery protection

◆Load switch

◆Power management