ECP3959|30V P-Channel MOSFETs

ECP3959|30V P-Channel MOSFETs

規格書下載

General Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.

Features

◆-30V,-85A, RDS(ON) =4.5mΩ@VGS = -10V
◆Fast switching
◆Green Device Available
◆Suit for -4.5V Gate Drive Applications

Application

◆Motor Driver Applications
◆POL Applications
◆Load Switch
◆LED Application


規格書下載

规格是死的,设计是活的
我们提供具有灵活弹性的客制化IC与模组设计

告诉我们你想做的产品项目吧!

规格是死的,设计是活的
我们提供具有灵活弹性的客制化IC与模组设计

告诉我们你想做的产品项目吧!

滚动至顶部

訂閱最新產品電子報

*必填