{"id":12827,"date":"2022-04-18T14:51:47","date_gmt":"2022-04-18T06:51:47","guid":{"rendered":"https:\/\/22ya4u4yz3u0.wpsite.pro\/?p=12827"},"modified":"2024-09-10T14:19:16","modified_gmt":"2024-09-10T06:19:16","slug":"enp4009","status":"publish","type":"post","link":"https:\/\/www.ecmos.com.tw\/cn\/mosfet\/enp4009\/","title":{"rendered":"ENP4009\uff5c40V N-Channel Enhancement Mode MOSFET"},"content":{"rendered":"<a href=\"https:\/\/www.ecmos.com.tw\/wp-content\/uploads\/2022\/04\/ENP4009_2D11N-Rev.F001.pdf\" download=\"ENP4009_2D11N-Rev.F001.pdf\" target=\"_blank\" rel=\"noopener noreferrer\">\n<div class=\"postbutton\">\u898f\u683c\u66f8\u4e0b\u8f09<\/div><\/a>\n\n\n\n<hr class=\"wp-block-separator has-css-opacity is-style-wide\"\/>\n\n\n\n<div style=\"height:50px\" aria-hidden=\"true\" class=\"wp-block-spacer\"><\/div>\n\n\n\n<h3 class=\"wp-block-heading\">General Description<\/h3>\n\n\n\n<p>The ENP4009 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.<br>Conduction and switching losses are minimized due to an extremely low combination of RDS(ON) and Crss.<\/p>\n\n\n\n<h3 class=\"wp-block-heading\"><strong>General Features<\/strong><\/h3>\n\n\n\n<ul class=\"wp-block-list\">\n<li>VDS =40V\uff0cID =10A<br>RDS(ON)(Typ.)=12m\u03a9 @VGS=10V<br>RDS(ON)(Typ.)=14m\u03a9 @VGS=4.5V<\/li>\n<\/ul>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Lead free product is acquired<\/li>\n\n\n\n<li>Surface mount package<\/li>\n<\/ul>\n\n\n\n<h3 class=\"wp-block-heading\"><strong>Application<\/strong><\/h3>\n\n\n\n<ul class=\"wp-block-list\">\n<li>High Frequency Point-of-Load Synchronous<br>Buck Converter for MB\/NB\/UMPC\/VGA<\/li>\n<\/ul>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Networking DC-DC Power System<\/li>\n\n\n\n<li>Load switch<\/li>\n<\/ul>\n\n\n\n<h3 class=\"wp-block-heading\"><strong>Package<\/strong><\/h3>\n\n\n\n<ul class=\"wp-block-list\">\n<li>SOP-8<\/li>\n<\/ul>\n\n\n\n<hr class=\"wp-block-separator has-css-opacity is-style-wide\"\/>\n\n\n\n<div style=\"height:50px\" aria-hidden=\"true\" class=\"wp-block-spacer\"><\/div>\n\n\n\n<iframe src=\"https:\/\/www.ecmos.com.tw\/wp-content\/uploads\/2022\/04\/ENP4009_2D11N-Rev.F001.pdf\" width=\"640\" height=\"1000\" allow=\"autoplay\"><\/iframe>\n\n\n\n<a href=\"https:\/\/www.ecmos.com.tw\/wp-content\/uploads\/2022\/04\/ENP4009_2D11N-Rev.F001.pdf\" download=\"ENP4009_2D11N-Rev.F001.pdf\" target=\"_blank\" rel=\"noopener noreferrer\">\n<div class=\"postbutton\">\u898f\u683c\u66f8\u4e0b\u8f09<\/div><\/a>\n\n\n\n<div style=\"height:50px\" aria-hidden=\"true\" class=\"wp-block-spacer\"><\/div>\n\n\n\n<hr class=\"wp-block-separator has-css-opacity is-style-wide\"\/>\n\n\n\n<p><\/p>","protected":false},"excerpt":{"rendered":"<p>\u898f\u683c\u66f8\u4e0b\u8f09 General Description The ENP4009 uses trench MOSFE [&hellip;]<\/p>\n","protected":false},"author":3,"featured_media":0,"comment_status":"closed","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"default","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","ast-disable-related-posts":"","theme-transparent-header-meta":"","adv-header-id-meta":"","stick-header-meta":"","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"set","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center 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performance. Conduction and switching losses are minimized due to an extremely low combination of RDS(ON) and Crss.","title":"ENP4009\uff5c40V N-Channel Enhancement Mode MOSFET - \u98db\u8679\u9ad8\u79d1\u80a1\u4efd\u6709\u9650\u516c\u53f8"},"footnotes":""},"categories":[41,130],"tags":[],"class_list":["post-12827","post","type-post","status-publish","format-standard","hentry","category-mosfet","category-n-mos-single"],"_links":{"self":[{"href":"https:\/\/www.ecmos.com.tw\/cn\/wp-json\/wp\/v2\/posts\/12827","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.ecmos.com.tw\/cn\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.ecmos.com.tw\/cn\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.ecmos.com.tw\/cn\/wp-json\/wp\/v2\/users\/3"}],"replies":[{"embeddable":true,"href":"https:\/\/www.ecmos.com.tw\/cn\/wp-json\/wp\/v2\/comments?post=12827"}],"version-history":[{"count":2,"href":"https:\/\/www.ecmos.com.tw\/cn\/wp-json\/wp\/v2\/posts\/12827\/revisions"}],"predecessor-version":[{"id":17505,"href":"https:\/\/www.ecmos.com.tw\/cn\/wp-json\/wp\/v2\/posts\/12827\/revisions\/17505"}],"wp:attachment":[{"href":"https:\/\/www.ecmos.com.tw\/cn\/wp-json\/wp\/v2\/media?parent=12827"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.ecmos.com.tw\/cn\/wp-json\/wp\/v2\/categories?post=12827"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.ecmos.com.tw\/cn\/wp-json\/wp\/v2\/tags?post=12827"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}