{"id":17664,"date":"2015-04-24T15:31:06","date_gmt":"2015-04-24T07:31:06","guid":{"rendered":"https:\/\/www.ecmos.com.tw\/?p=17664"},"modified":"2025-04-24T17:41:03","modified_gmt":"2025-04-24T09:41:03","slug":"%e6%b8%ac%e8%a9%a6%e7%94%a2%e5%93%81ecks120m080%ef%bd%9csilicon-carbide-mosfet","status":"publish","type":"post","link":"https:\/\/www.ecmos.com.tw\/cn\/gan-mos\/%e6%b8%ac%e8%a9%a6%e7%94%a2%e5%93%81ecks120m080%ef%bd%9csilicon-carbide-mosfet\/","title":{"rendered":"\u6e2c\u8a66\u7522\u54c1ECKS120M080\uff5cSilicon Carbide MOSFET"},"content":{"rendered":"\n
\u898f\u683c\u66f8\u4e0b\u8f09<\/div><\/a>\n\n\n\n
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General Features<\/h3>\n\n\n\n
Order code<\/td>Vds<\/td>Rds(on)<\/td>Id<\/td><\/tr>
TKS120M080F4<\/td>1200V<\/td>80.0 m\u2126<\/td>35A<\/td><\/tr><\/tbody><\/table><\/figure>\n\n\n\n
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  • Robust semiconductor material \u2013 SiC<\/li>\n\n\n\n
  • Very Low Switching losses<\/li>\n\n\n\n
  • IGBT \u2013 compatible driving function<\/li>\n\n\n\n
  • Very good temperature related stability<\/li>\n\n\n\n
  • High avalanche ruggedness<\/li>\n\n\n\n
  • JEDEC Qualified<\/li>\n\n\n\n
  • Source Kelvin<\/li>\n<\/ul>\n\n\n\n

    Applications<\/h3>\n\n\n\n
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    • Solar inverters<\/li>\n\n\n\n
    • PFC<\/li>\n\n\n\n
    • UPS<\/li>\n\n\n\n
    • DC-DC Converter<\/li>\n\n\n\n
    • Welding<\/li>\n\n\n\n
    • EV Charging<\/li>\n<\/ul>\n\n\n\n

      General Description<\/h3>\n\n\n\n

      This Silicon Carbide Power MOSFET series realized from Tronkor to obtain higher breakdown voltage and robust gate.
      Suitable for high switching frequency and high\u0002charging efficiency systems, industrial motors driving and welding applications.
      It is also suitable for applications with high frequency switching and hard switching driving requirements.<\/p>\n\n\n\n

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