ECDB2116S|P & N-Channel 20-V(D-S) MOSFETs

ECDB2116S|P & N-Channel 20-V(D-S) MOSFETs

規格書下載

General Description

These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.

Features

◆20V/3.8A, RDS(ON) = 40mΩ @ VGS = 4.5V
◆-20V/-2.5A, RDS(ON) =100mΩ @ VGS = 4.5V
◆Fast switching speed
◆Suit for 1.8V Gate Drive Applications
◆DFN 2×2-6 package design

Applications

◆Notebook
◆Newworking
◆Load Switch
◆Hand-held Instruments


規格書下載

The Rules Are Rigid, The Design Is Alive
We Provide Flexible And Flexible Customized Ic And Module Design

Tell Us What Product Project You Want To Do!

The Rules Are Rigid, The Design Is Alive
We Provide Flexible And Flexible Customized Ic And Module Design

Tell Us What Product Project You Want To Do!

Scroll to Top

訂閱最新產品電子報

*必填