ECP6910|60V N-Channel MOSFETs

ECP6910|60V N-Channel MOSFETs

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General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.

Features

◆60V,16A, RDS(ON) =50mΩ@VGS = 10V
◆Improved dv/dt capability Improved dv/dt capability
◆Fast switching
◆100% EAS Guaranteed
◆Green Device Available

Application

◆Motor Drive
◆Power Tools
◆LED Lighting



規格書下載

The Rules Are Rigid, The Design Is Alive
We Provide Flexible And Flexible Customized Ic And Module Design

Tell Us What Product Project You Want To Do!

The Rules Are Rigid, The Design Is Alive
We Provide Flexible And Flexible Customized Ic And Module Design

Tell Us What Product Project You Want To Do!

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