{"id":12853,"date":"2022-04-18T15:44:27","date_gmt":"2022-04-18T07:44:27","guid":{"rendered":"https:\/\/22ya4u4yz3u0.wpsite.pro\/?p=12853"},"modified":"2024-09-10T14:17:51","modified_gmt":"2024-09-10T06:17:51","slug":"enp2300","status":"publish","type":"post","link":"https:\/\/www.ecmos.com.tw\/en\/mosfet\/enp2300\/","title":{"rendered":"ENP2300\uff5c20V N-Channel Enhancement Mode MOSFET"},"content":{"rendered":"\n
\u898f\u683c\u66f8\u4e0b\u8f09<\/div><\/a>\n\n\n\n
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General Description<\/h3>\n\n\n\n

The ENP2300 uses advanced trench technology to provide excellent RDS(ON), low gate charge and high density cell Design for ultra low on-resistance.
This device is suitable for use as a load switch or in PWM applications.<\/p>\n\n\n\n

General Features<\/strong><\/h3>\n\n\n\n
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  • VDS =20V\uff0cID =5A
    RDS(ON)(Typ.) =22m\u03a9 \u00a0\u00a0@ VGS =4.5V
    RDS(ON)(Typ. )=26m\u03a9 \u00a0\u00a0@VGS =2.5V<\/li>\n\n\n\n
  • High power and current handing capability<\/li>\n\n\n\n
  • Lead free product is acquired<\/li>\n\n\n\n
  • Surface mount package<\/li>\n<\/ul>\n\n\n\n

    Application<\/strong><\/h3>\n\n\n\n
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    • PWM applications<\/li>\n\n\n\n
    • Load switch<\/li>\n<\/ul>\n\n\n\n

      Package<\/strong><\/h3>\n\n\n\n
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      • SOT-23<\/li>\n<\/ul>\n\n\n\n
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        <\/div>\n\n\n\n