{"id":502,"date":"2022-01-13T03:15:00","date_gmt":"2022-01-12T19:15:00","guid":{"rendered":"https:\/\/ecmos2.liho.work\/?p=502"},"modified":"2024-09-10T14:20:51","modified_gmt":"2024-09-10T06:20:51","slug":"ecp6910","status":"publish","type":"post","link":"https:\/\/www.ecmos.com.tw\/en\/mosfet\/ecp6910\/","title":{"rendered":"ECP6910\uff5c60V N-Channel MOSFETs"},"content":{"rendered":"\n
\u898f\u683c\u66f8\u4e0b\u8f09<\/div><\/a>\n\n\n\n
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General Description<\/h3>\n\n\n\n

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.<\/p>\n\n\n\n

Features<\/h3>\n\n\n\n

\u25c660V,16A, RDS(ON) =50m\u03a9@VGS = 10V
\u25c6Improved dv\/dt capability Improved dv\/dt capability
\u25c6Fast switching
\u25c6100% EAS Guaranteed
\u25c6Green Device Available<\/p>\n\n\n\n

Application<\/h3>\n\n\n\n

\u25c6Motor Drive
\u25c6Power Tools
\u25c6LED Lighting<\/p>\n\n\n\n


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