ECF8205|Dual N-Channel Enhancement Mode Power MOSFET

ECF8205|Dual N-Channel Enhancement Mode Power MOSFET


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Dual N-Channel Enhancement Mode Power MOSFET

ECF8205

 

 

 

1. Features​​ 

1.1 ​​ ​​ ​​ ​​​​ ​​ Low on-resistance​​ 

1.1.1​​  ​​​​ RDS(ON)​​ = 28 mΩ MAX. (VGS​​ = 4.5V, ID​​ = 4A)

1.1.2​​  ​​​​ RDS(ON)​​ = 37 mΩ MAX. (VGS​​ = 2.5V, ID​​ = 3A)

 

 

2.Applications

 

  • Li-ion battery management applications

 

 

3. Ordering Information

 

 

 

 

 

4. Pin Assignment

 

 

 

 

 

 

 

 

 

 

 

5. Absolute Maximum Ratings

 

 

 

 

 

 

 

 

 

 

 

 

 

6. Thermal Data

 

 

 

 

7. Electrical Characteristics

 

Electrical Characteristics @​​ Tj​​ = 25℃ ( unless otherwise specified )

 

 

 

 

 

 

 

 

 

 

 

 

8. Source-Drain Diode

 

 

 

 

Notes:

1. Pulse width limited by Max. junction temperature.​​ 

2. Pulse width​​ ​​ 300us, duty cycle​​ ​​ 2%.​​ 

3. Surface mounted on 1 in2​​ copper pad of FR4 board;

208℃/W when mounted on Min. copper pad.

 

 

 

 

 

 

 

 

 

 

 

 

 

9. Typical Characteristics

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

10. Package Information