ECP6910 60V N-Channel MOSFETs
General Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This
advanced technology has been especially tailored to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are
well suited for high efficiency fast switching applications.
BVDSS RDSON ID
60V 50mW 16A
Features
◆60V,16A, RDS(ON) =50mΩ@VGS = 10V
◆Improved dv/dt capability Improved dv/dt capability
◆Fast switching
◆100% EAS Guaranteed
◆Green Device Available
Application
◆Motor Drive
◆Power Tools
◆LED Lighting
