ECP6910 60V N-Channel MOSFETs

ECP6910 60V N-Channel MOSFETs

ECP6910 60V N-Channel MOSFETs
General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This

advanced technology has been especially tailored to minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are

well suited for high efficiency fast switching applications.

BVDSS RDSON ID
60V 50mW 16A

Features

◆60V,16A, RDS(ON) =50mΩ@VGS = 10V

◆Improved dv/dt capability Improved dv/dt capability

◆Fast switching

◆100% EAS Guaranteed

◆Green Device Available

Application

◆Motor Drive

◆Power Tools

◆LED Lighting


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规格是死的,设计是活的
我们提供具有灵活弹性的客制化IC与模组设计

告诉我们你想做的产品项目吧!