ENP4826|60V Dual N-Channel Enhancement Mode MOSFET

ENP4826|60V Dual N-Channel Enhancement Mode MOSFET

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General Description

The ENP4826 uses advanced trench technology to provide excellent RDS(on) with low gate charge.
This device is suitable for high side switch in SMPS and general purpose applications.

General Features

  • VDS= 60V, ID= 6A
    RDS(ON)= 19mΩ (typical)  @VGS= 10V
    RDS(ON)= 22mΩ (typical)  @ VGS=4.5V
  • Excellent gate charge xRDS(ON) product (F OM)
  • Very low on-resistance RDS(ON)
  • 150 °C operating temperature
  • Pb-free lead plating

Application

  • DC/DC Converter
  • Ideal for high-frequency switching and synchronous rectification

Package

  • SOP-8

規格書下載

The Rules Are Rigid, The Design Is Alive
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The Rules Are Rigid, The Design Is Alive
We Provide Flexible And Flexible Customized Ic And Module Design

Tell Us What Product Project You Want To Do!

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