ECP3959-30V P-Channel MOSFETs

General Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.

 

Features

◆-30V,-85A, RDS(ON) =4.5mΩ@VGS = -10V

◆Fast switching

◆Green Device Available

◆Suit for -4.5V Gate Drive Applications

 

Application

◆Motor Driver Applications

◆POL Applications

◆Load Switch

◆LED Application

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