ENP65S03|30V N-Channel Enhancement Mode MOSFET

ENP65S03|30V N-Channel Enhancement Mode MOSFET

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General Description

The ENP65S03 uses SGT technology that is uniquely optimized to provide the most efficient high frequency switching performance.
Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.
This device is ideal for high-frequency switching and synchronous rectification.

General Features

  • VDS =30V ID =65A
    RDS(ON)(Typ.)=6.5 mΩ @VGS=10V
    RDS(ON)(Typ.)=9.5 mΩ @VGS=4.5V
  • Very low on-resistance RDS(on)
  • 150 °C operating temperature
  • 100% UIS tested

Application

  • Synchronus Rectification in DC/DC and AC/DC Converters
  • Industrial and Motor Drive applications

規格書下載

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我们提供具有灵活弹性的客制化IC与模组设计

告诉我们你想做的产品项目吧!

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