ENP65S03|30V N-Channel Enhancement Mode MOSFET

ENP65S03|30V N-Channel Enhancement Mode MOSFET

規格書下載

General Description

The ENP65S03 uses SGT technology that is uniquely optimized to provide the most efficient high frequency switching performance.
Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.
This device is ideal for high-frequency switching and synchronous rectification.

General Features

  • VDS =30V ID =65A
    RDS(ON)(Typ.)=6.5 mΩ @VGS=10V
    RDS(ON)(Typ.)=9.5 mΩ @VGS=4.5V
  • Very low on-resistance RDS(on)
  • 150 °C operating temperature
  • 100% UIS tested

Application

  • Synchronus Rectification in DC/DC and AC/DC Converters
  • Industrial and Motor Drive applications

規格書下載

規格是死的,設計是活的
我們提供具有靈活彈性的客製化IC與模組設計

告訴我們你想做的產品項目吧!

規格是死的,設計是活的
我們提供具有靈活彈性的客製化IC與模組設計

告訴我們你想做的產品項目吧!

回到頂端

訂閱最新產品電子報

*必填