ENP3411|30V P-Channel Enhancement Mode MOSFET

ENP3411|30V P-Channel Enhancement Mode MOSFET

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General Description

The ENP3411 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.
This device is suitable for use as a load switch or in PWM applications.

General Features

  • VDS =-30V,ID =-9A
    RDS(ON)(Typ.)=22mΩ @VGS=-10V
    RDS(ON)(Typ.)=28mΩ @VGS=-4.5V
  •  High power and current handing capability
  •  Lead free product is acquired
  • Surface mount package

Application

  • PWM applications
  • Load switch

Package

  • SOT-23-3L

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The Rules Are Rigid, The Design Is Alive
We Provide Flexible And Flexible Customized Ic And Module Design

Tell Us What Product Project You Want To Do!

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