ENP3411|30V P-Channel Enhancement Mode MOSFET

ENP3411|30V P-Channel Enhancement Mode MOSFET

規格書下載

General Description

The ENP3411 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.
This device is suitable for use as a load switch or in PWM applications.

General Features

  • VDS =-30V,ID =-9A
    RDS(ON)(Typ.)=22mΩ @VGS=-10V
    RDS(ON)(Typ.)=28mΩ @VGS=-4.5V
  •  High power and current handing capability
  •  Lead free product is acquired
  • Surface mount package

Application

  • PWM applications
  • Load switch

Package

  • SOT-23-3L

規格書下載

規格是死的,設計是活的
我們提供具有靈活彈性的客製化IC與模組設計

告訴我們你想做的產品項目吧!

規格是死的,設計是活的
我們提供具有靈活彈性的客製化IC與模組設計

告訴我們你想做的產品項目吧!

Scroll to Top

訂閱最新產品電子報

*必填