ENP3411|30V P-Channel Enhancement Mode MOSFET

ENP3411|30V P-Channel Enhancement Mode MOSFET

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General Description

The ENP3411 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.
This device is suitable for use as a load switch or in PWM applications.

General Features

  • VDS =-30V,ID =-9A
    RDS(ON)(Typ.)=22mΩ @VGS=-10V
    RDS(ON)(Typ.)=28mΩ @VGS=-4.5V
  •  High power and current handing capability
  •  Lead free product is acquired
  • Surface mount package

Application

  • PWM applications
  • Load switch

Package

  • SOT-23-3L

規格書下載

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规格是死的,设计是活的
我们提供具有灵活弹性的客制化IC与模组设计

告诉我们你想做的产品项目吧!

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