ECKS120M080|Silicon Carbide MOSFET

ECKS120M080|Silicon Carbide MOSFET

規格書下載

General Features

Order codeVdsRds(on)Id
TKS120M080F41200V80.0 mΩ35A
  • Robust semiconductor material – SiC
  • Very Low Switching losses
  • IGBT – compatible driving function
  • Very good temperature related stability
  • High avalanche ruggedness
  • JEDEC Qualified
  • Source Kelvin

Applications

  • Solar inverters
  • PFC
  • UPS
  • DC-DC Converter
  • Welding
  • EV Charging

General Description

This Silicon Carbide Power MOSFET series realized from Tronkor to obtain higher breakdown voltage and robust gate.
Suitable for high switching frequency and highcharging efficiency systems, industrial motors driving and welding applications.
It is also suitable for applications with high frequency switching and hard switching driving requirements.



規格書下載

规格是死的,设计是活的
我们提供具有灵活弹性的客制化IC与模组设计

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规格是死的,设计是活的
我们提供具有灵活弹性的客制化IC与模组设计

告诉我们你想做的产品项目吧!

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