General Features
| Order code | Vds | Rds(on) | Id |
| TKS120M080F4 | 1200V | 80.0 mΩ | 35A |
- Robust semiconductor material – SiC
- Very Low Switching losses
- IGBT – compatible driving function
- Very good temperature related stability
- High avalanche ruggedness
- JEDEC Qualified
- Source Kelvin
Applications
- Solar inverters
- PFC
- UPS
- DC-DC Converter
- Welding
- EV Charging
General Description
This Silicon Carbide Power MOSFET series realized from Tronkor to obtain higher breakdown voltage and robust gate.
Suitable for high switching frequency and highcharging efficiency systems, industrial motors driving and welding applications.
It is also suitable for applications with high frequency switching and hard switching driving requirements.
