ECKS120M080|Silicon Carbide MOSFET

ECKS120M080|Silicon Carbide MOSFET

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General Features

Order codeVdsRds(on)Id
TKS120M080F41200V80.0 mΩ35A
  • Robust semiconductor material – SiC
  • Very Low Switching losses
  • IGBT – compatible driving function
  • Very good temperature related stability
  • High avalanche ruggedness
  • JEDEC Qualified
  • Source Kelvin

Applications

  • Solar inverters
  • PFC
  • UPS
  • DC-DC Converter
  • Welding
  • EV Charging

General Description

This Silicon Carbide Power MOSFET series realized from Tronkor to obtain higher breakdown voltage and robust gate.
Suitable for high switching frequency and highcharging efficiency systems, industrial motors driving and welding applications.
It is also suitable for applications with high frequency switching and hard switching driving requirements.



規格書下載

The Rules Are Rigid, The Design Is Alive
We Provide Flexible And Flexible Customized Ic And Module Design

Tell Us What Product Project You Want To Do!

The Rules Are Rigid, The Design Is Alive
We Provide Flexible And Flexible Customized Ic And Module Design

Tell Us What Product Project You Want To Do!

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