ECKS120M080|Silicon Carbide MOSFET

ECKS120M080|Silicon Carbide MOSFET

規格書下載

General Features

Order codeVdsRds(on)Id
TKS120M080F41200V80.0 mΩ35A
  • Robust semiconductor material – SiC
  • Very Low Switching losses
  • IGBT – compatible driving function
  • Very good temperature related stability
  • High avalanche ruggedness
  • JEDEC Qualified
  • Source Kelvin

Applications

  • Solar inverters
  • PFC
  • UPS
  • DC-DC Converter
  • Welding
  • EV Charging

General Description

This Silicon Carbide Power MOSFET series realized from Tronkor to obtain higher breakdown voltage and robust gate.
Suitable for high switching frequency and highcharging efficiency systems, industrial motors driving and welding applications.
It is also suitable for applications with high frequency switching and hard switching driving requirements.



規格書下載

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規格是死的,設計是活的
我們提供具有靈活彈性的客製化IC與模組設計

告訴我們你想做的產品項目吧!

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