ECDB2116S P & N-Channel 20-V(D-S) MOSFETs

Description

These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency fast switching applications.

 Features

◆20V/3.8A, RDS(ON) = 40mΩ @ VGS = 4.5V

◆-20V/-2.5A, RDS(ON) =100mΩ @ VGS = 4.5V

◆Fast switching speed

◆Suit for 1.8V Gate Drive Applications

◆DFN 2×2-6 package design

 Applications

◆Notebook

◆Newworking

◆Load Switch

◆Hand-held Instruments

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