ENP35N04|N-Channel Trench Enhancement Mode MOSFET

ENP35N04|N-Channel Trench Enhancement Mode MOSFET

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General Description

The ENP35N04 uses Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance.
Both conduction andswitching power losses are minimized due to anextremely low combination of RDS(ON) and Qg.
This deviceis ideal for high-frequency switching and synchronous rectification.

  • VDS =40V,ID =35A           RDS(ON)=7.9mΩ (typical) @ VGS=10V   RDS(ON)=10.2mΩ (typical) @ VGS=4.5V
  • Excellent gate charge x RDS(ON) product(FOM)
  • Very low on-resistance RDS(ON)
  • 150 °C operating temperature
  • Pb-free lead plating
  • 100% UIS tested

Applications

  • DC/DC Converter
  • Ideal for high-frequency switching and synchronous rectification

Package

  • DFN3*3-8L


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