These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
◆100V,70A, RDS(ON) =7.8mΩ@VGS = 10V
◆Improved dv/dt capability
◆100% EAS Guaranteed
◆Green Device Available