ENP60S06D6|60V N-Channel Enhancement Mode MOSFET

ENP60S06D6|60V N-Channel Enhancement Mode MOSFET

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General Description

The NP60S06D6 uses SGT technology that is uniquely optimized to provide the most efficient high frequency switching performance.
Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.
This device is ideal for high-frequency switching and synchronous rectification.

General Feature

  • VDS =60V,ID =60A
    RDS(ON)(Typ.)=7.9 mΩ @VGS=1
    RDS(ON)(Typ.)=11.9 mΩ @V
  • Very low on-resistance RDS(on)
  • 150 °C operating tempera
  • 100% UIS tes

Application

  • Synchronus Rectification in DC/DC and AC/DC Converters
  • Industrial and Motor Drive application

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