These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
◆-30V,-85A, RDS(ON) =4.5mΩ@VGS = -10V
◆Green Device Available
◆Suit for -4.5V Gate Drive Applications
◆Motor Driver Applications