ENP2300|20V N-Channel Enhancement Mode MOSFET

ENP2300|20V N-Channel Enhancement Mode MOSFET

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General Description

The ENP2300 uses advanced trench technology to provide excellent RDS(ON), low gate charge and high density cell Design for ultra low on-resistance.
This device is suitable for use as a load switch or in PWM applications.

General Features

  • VDS =20V,ID =5A
    RDS(ON)(Typ.) =22mΩ   @ VGS =4.5V
    RDS(ON)(Typ. )=26mΩ   @VGS =2.5V
  • High power and current handing capability
  • Lead free product is acquired
  • Surface mount package

Application

  • PWM applications
  • Load switch

Package

  • SOT-23

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The Rules Are Rigid, The Design Is Alive
We Provide Flexible And Flexible Customized Ic And Module Design

Tell Us What Product Project You Want To Do!

The Rules Are Rigid, The Design Is Alive
We Provide Flexible And Flexible Customized Ic And Module Design

Tell Us What Product Project You Want To Do!

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