ENP2300|20V N-Channel Enhancement Mode MOSFET

ENP2300|20V N-Channel Enhancement Mode MOSFET

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General Description

The ENP2300 uses advanced trench technology to provide excellent RDS(ON), low gate charge and high density cell Design for ultra low on-resistance.
This device is suitable for use as a load switch or in PWM applications.

General Features

  • VDS =20V,ID =5A
    RDS(ON)(Typ.) =22mΩ   @ VGS =4.5V
    RDS(ON)(Typ. )=26mΩ   @VGS =2.5V
  • High power and current handing capability
  • Lead free product is acquired
  • Surface mount package

Application

  • PWM applications
  • Load switch

Package

  • SOT-23

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