ENP3400|N-Channel Enhancement Mode MOSFET

ENP3400|N-Channel Enhancement Mode MOSFET

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General Description

The ENP3400 uses advanced trench technology to provide excellent RDS(ON)  , low gate charge and high density cell Design for ultra low on-resistance.
This device is suitable for use as a load switch or in PWM applications.

General Features

  • VDS=30V, ID=5.8A
  • RDS(ON)(Typ.)=22mΩ   @VGS=4.5V
  • RDS(ON)(Typ.)=28mΩ   @VGS=2.5V
  • High power and current handing capability
  • Lead free product is acquired
  • Surface mount package

Application

  • PWM applications
  • Load switch

Package

  • SOT-23-3L

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