These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
◆20V/3.8A, RDS(ON) = 40mΩ @ VGS = 4.5V
◆-20V/-2.5A, RDS(ON) =100mΩ @ VGS = 4.5V
◆Fast switching speed
◆Suit for 1.8V Gate Drive Applications
◆DFN 2×2-6 package design